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SQJ457EP-T1_BE3

SQJ457EP-T1_BE3 Vishay / Siliconix

sqj457ep.pdf
Hersteller: Vishay / Siliconix
MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.39 EUR
10+1.53 EUR
100+1.02 EUR
500+0.82 EUR
1000+0.73 EUR
3000+0.64 EUR
6000+0.62 EUR
Mindestbestellmenge: 2
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Technische Details SQJ457EP-T1_BE3 Vishay / Siliconix

Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V, Qualification: AEC-Q101.

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SQJ457EP-T1_BE3 Hersteller : Vishay Siliconix sqj457ep.pdf 60V, 36A max P-Channel TrenchFET Power MOSFET, 25mOhm @ Vgs = 10V Група товару: Транзистори Од. вим: шт
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+1.99 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQJ457EP-T1_BE3 SQJ457EP-T1_BE3 Hersteller : Vishay sqj457ep.pdf Trans MOSFET P-CH 60V 36A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101
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SQJ457EP-T1_BE3 SQJ457EP-T1_BE3 Hersteller : Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ457EP-T1_BE3 SQJ457EP-T1_BE3 Hersteller : Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH