SQJ459EP-T1_BE3 Vishay
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 150+ | 0.97 EUR |
| 175+ | 0.8 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ459EP-T1_BE3 Vishay
Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V.
Weitere Produktangebote SQJ459EP-T1_BE3 nach Preis ab 0.52 EUR bis 2.22 EUR
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SQJ459EP-T1_BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V |
auf Bestellung 2938 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ459EP-T1_BE3 | Hersteller : Vishay Semiconductors |
MOSFETs PowerPAK SO-8L |
auf Bestellung 2221 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ459EP-T1_BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V |
Produkt ist nicht verfügbar |
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SQJ459EP-T1-BE3 | Hersteller : Vishay | MOSFETs PPAKSO8 P-CH 60V 52A |
Produkt ist nicht verfügbar |
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| SQJ459EP-T1/BE3 | Hersteller : Vishay |
Produkt ist nicht verfügbar |
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| SQJ459EP-T1_BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |