SQJ460AEP-T1_GE3 Vishay / Siliconix
auf Bestellung 10460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.04 EUR |
| 3000+ | 1.00 EUR |
| 6000+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ460AEP-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ460AEP-T1_GE3 nach Preis ab 1.05 EUR bis 2.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ460AEP-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 32A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1812 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SQJ460AEP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 58A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
SQJ460AEP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
SQJ460AEP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 32A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |