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SQJ464EP-T1_GE3 Vishay


sqj464ep.pdf
Hersteller: Vishay
Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.65 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ464EP-T1_GE3 Vishay

Description: MOSFET N-CH 60V 32A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

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SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay sqj464ep.pdf Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay Siliconix sqj464ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
6000+0.75 EUR
9000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay / Siliconix sqj464ep.pdf MOSFETs N-Chnl 60-V (D-S) AEC-Q101 Qualified
auf Bestellung 76337 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.95 EUR
10+1.87 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
3000+0.77 EUR
6000+0.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay Siliconix sqj464ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 11585 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
11+1.93 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 sqj464ep.pdf
Hersteller: Vishay
Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 sqj464ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.81 EUR
6000+0.75 EUR
9000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 sqj464ep.pdf
Hersteller: Vishay / Siliconix
MOSFETs N-Chnl 60-V (D-S) AEC-Q101 Qualified
auf Bestellung 76337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.95 EUR
10+1.87 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
3000+0.77 EUR
6000+0.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ464EP-T1_GE3 sqj464ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 11585 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+1.93 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH