SQJ464EP-T1_GE3 Vishay
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.55 EUR |
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Technische Details SQJ464EP-T1_GE3 Vishay
Description: MOSFET N-CH 60V 32A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V.
Weitere Produktangebote SQJ464EP-T1_GE3 nach Preis ab 0.61 EUR bis 2.57 EUR
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SQJ464EP-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ464EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 32A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ464EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs N-Chnl 60-V (D-S) AEC-Q101 Qualified |
auf Bestellung 84681 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ464EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 32A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V |
auf Bestellung 11585 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ464EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 32A 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |