SQJ465EP-T1-GE3 Vishay
auf Bestellung 2794 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 174+ | 0.91 EUR |
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Technische Details SQJ465EP-T1-GE3 Vishay
Description: MOSFET P-CH 60V 8A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ465EP-T1-GE3 nach Preis ab 0.78 EUR bis 3.09 EUR
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SQJ465EP-T1_GE3 | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ465EP-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ465EP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 2794 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ465EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 8A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2955 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ465EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET -60V -8A 45W AEC-Q101 Qualified |
auf Bestellung 42662 Stücke: Lieferzeit 14-28 Tag (e) |
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SQJ465EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ465EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.07 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 13967 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ465EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ465EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.07 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 13967 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ465EP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SQJ465EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SQJ465EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 8A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQJ465EP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 781-SQJ465EP-T1_GE3 |
Produkt ist nicht verfügbar |