SQJ740EP-T1_GE3 Vishay / Siliconix
Hersteller: Vishay / Siliconix
MOSFETs Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8L BWL, 3.4 mohm a. 10V
| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 2.66 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.39 EUR |
| 3000+ | 1.33 EUR |
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Technische Details SQJ740EP-T1_GE3 Vishay / Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (, Supplier Device Package: PowerPAK® SO-8L Dual BWL, Vgs(th) (Max) @ Id: 3.5V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 93W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active.
Weitere Produktangebote SQJ740EP-T1_GE3 nach Preis ab 3.03 EUR bis 3.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SQJ740EP-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V ( Part Status: Active Supplier Device Package: PowerPAK® SO-8L Dual BWL Vgs(th) (Max) @ Id: 3.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 93W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ740EP-T1_GE3 |
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.38 EUR |
| 10+ | 3.03 EUR |