SQJ844AEP-T1_GE3 Vishay / Siliconix
auf Bestellung 23688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.50 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.82 EUR |
| 3000+ | 0.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ844AEP-T1_GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V, Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJ844AEP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SQJ844AEP-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|
 |
SQJ844AEP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
|
|
|
SQJ844AEP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |