SQJ858AEP-T1_BE3 Vishay / Siliconix
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.20 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.90 EUR |
| 3000+ | 0.84 EUR |
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Technische Details SQJ858AEP-T1_BE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ858AEP-T1_BE3 nach Preis ab 0.94 EUR bis 2.20 EUR
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SQJ858AEP-T1_BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 40V 58A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2893 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ858AEP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |