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SQJ910AEP-T1_BE3

SQJ910AEP-T1_BE3 Vishay Siliconix

sqj910aep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
11+1.64 EUR
100+1.27 EUR
500+1.08 EUR
1000+0.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ910AEP-T1_BE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V, Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ910AEP-T1_BE3 nach Preis ab 0.80 EUR bis 2.66 EUR

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SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Hersteller : Vishay sqj910aep.pdf MOSFETs DUAL N-CHANNEL 30-V (D-S) 175C MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+1.81 EUR
100+1.23 EUR
500+0.99 EUR
1000+0.90 EUR
3000+0.83 EUR
6000+0.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Hersteller : Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH