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SQJ912DEP-T1_GE3

SQJ912DEP-T1_GE3 Vishay Siliconix

sqj912dep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.67 EUR
6000+0.62 EUR
9000+0.6 EUR
15000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ912DEP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 40V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ912DEP-T1_GE3 nach Preis ab 0.67 EUR bis 2.55 EUR

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SQJ912DEP-T1_GE3 SQJ912DEP-T1_GE3 Vishay Siliconix sqj912dep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20309 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
12+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJ912DEP-T1_GE3 SQJ912DEP-T1_GE3 Vishay / Siliconix sqj912dep.pdf MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
auf Bestellung 6231 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.55 EUR
10+1.62 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.77 EUR
3000+0.68 EUR
6000+0.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQJ912DEP-T1_GE3 sqj912dep.pdf
SQJ912DEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
12+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJ912DEP-T1_GE3 sqj912dep.pdf
SQJ912DEP-T1_GE3
Hersteller: Vishay / Siliconix
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
auf Bestellung 6231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+1.62 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.77 EUR
3000+0.68 EUR
6000+0.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH