SQJ968EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2 N-CH 60V POWERPAK SO8, Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 42W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TA), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V, Rds On (Max) @ Id, Vgs: 33.6mOhm @ 4.8A, 10V.