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SQJ992EP-T2_GE3

SQJ992EP-T2_GE3 Vishay Siliconix


sqj992ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
6000+0.58 EUR
9000+0.56 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ992EP-T2_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 15A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V, Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SQJ992EP-T2_GE3 nach Preis ab 0.65 EUR bis 1.48 EUR

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SQJ992EP-T2_GE3 SQJ992EP-T2_GE3 Hersteller : Vishay Siliconix sqj992ep.pdf Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.94 EUR
500+0.8 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH