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SQJA00EP-T1_GE3

SQJA00EP-T1_GE3 Vishay Siliconix

sqja00ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.67 EUR
6000+0.62 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJA00EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 30A PPAK SO-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Weitere Produktangebote SQJA00EP-T1_GE3 nach Preis ab 0.62 EUR bis 2.53 EUR

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SQJA00EP-T1_GE3 SQJA00EP-T1_GE3 Vishay Semiconductors sqja00ep.pdf MOSFETs 60V Vds 30A Id AEC-Q101 Qualified
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.97 EUR
10+1.32 EUR
100+1 EUR
500+0.83 EUR
1000+0.69 EUR
3000+0.64 EUR
6000+0.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQJA00EP-T1_GE3 SQJA00EP-T1_GE3 Vishay Siliconix sqja00ep.pdf Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6089 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
11+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJA00EP-T1_GE3 Vishay / Siliconix sqja00ep-1079985.pdf MOSFET 60V Vds 30A Id AEC-Q101 Qualified
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJA00EP-T1_GE3 sqja00ep.pdf
SQJA00EP-T1_GE3
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 30A Id AEC-Q101 Qualified
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.97 EUR
10+1.32 EUR
100+1 EUR
500+0.83 EUR
1000+0.69 EUR
3000+0.64 EUR
6000+0.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQJA00EP-T1_GE3 sqja00ep.pdf
SQJA00EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJA00EP-T1_GE3 sqja00ep-1079985.pdf
Hersteller: Vishay / Siliconix
MOSFET 60V Vds 30A Id AEC-Q101 Qualified
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH