SQJA16EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5485 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3305 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.64 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJA16EP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 278A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5485 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJA16EP-T1_GE3 nach Preis ab 1.66 EUR bis 3.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJA16EP-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET |
auf Bestellung 32118 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| SQJA16EP-T1_GE3 | Hersteller : VISHAY |
SQJA16EP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
SQJA16EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5485 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |