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SQJA36EP-T1_GE3

SQJA36EP-T1_GE3 Vishay Siliconix


sqja36ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJA36EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 350A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Tc), Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V, Qualification: AEC-Q101.

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SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 Hersteller : Vishay Siliconix sqja36ep.pdf Description: MOSFET N-CH 40V 350A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.63 EUR
100+1.96 EUR
500+1.57 EUR
1000+1.50 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 Hersteller : Vishay sqja36ep.pdf Trans MOSFET N-CH 40V 350A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 Hersteller : Vishay sqja36ep.pdf Trans MOSFET N-CH 40V 350A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
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SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 Hersteller : Vishay sqja36ep.pdf Trans MOSFET N-CH 40V 350A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
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SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 Hersteller : Vishay Semiconductors sqja36ep-1766491.pdf MOSFET 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK
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