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SQJA64EP-T1_BE3

SQJA64EP-T1_BE3 Vishay Siliconix

sqja64ep.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.41 EUR
9000+ 0.38 EUR
Mindestbestellmenge: 3000
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Technische Details SQJA64EP-T1_BE3 Vishay Siliconix

Description: N-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQJA64EP-T1_BE3 nach Preis ab 0.49 EUR bis 1.14 EUR

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SQJA64EP-T1_BE3 SQJA64EP-T1_BE3 Hersteller : Vishay Siliconix sqja64ep.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 0.99 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 16
SQJA64EP-T1-BE3 Hersteller : Vishay MOSFET N-CH 60-V 175C MSFT
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