Weitere Produktangebote SQJA72EP-T1 nach Preis ab 1.07 EUR bis 2.43 EUR
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SQJA72EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 37A PPAK SO-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 2811 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJA72EP-T1_GE3 | Vishay / Siliconix |
MOSFET 100V Vds -/+20V Vgs PowerPAK SO-8L |
auf Bestellung 9802 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJA72EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 37A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2811 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.07 EUR |
| SQJA72EP-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFET 100V Vds -/+20V Vgs PowerPAK SO-8L
MOSFET 100V Vds -/+20V Vgs PowerPAK SO-8L
auf Bestellung 9802 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH