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SQJB02ELP-T1_GE3

SQJB02ELP-T1_GE3 Vishay / Siliconix


sqjb02elp.pdf Hersteller: Vishay / Siliconix
MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
auf Bestellung 5987 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.80 EUR
10+1.62 EUR
100+1.26 EUR
500+1.04 EUR
1000+0.82 EUR
3000+0.77 EUR
Mindestbestellmenge: 2
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Technische Details SQJB02ELP-T1_GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 40V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SQJB02ELP-T1_GE3 nach Preis ab 0.77 EUR bis 2.52 EUR

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SQJB02ELP-T1_GE3 SQJB02ELP-T1_GE3 Hersteller : Vishay Siliconix sqjb02elp.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJB02ELP-T1_GE3 SQJB02ELP-T1_GE3 Hersteller : Vishay Siliconix sqjb02elp.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH