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SQJB40EP-T1_BE3

SQJB40EP-T1_BE3 Vishay Siliconix


sqjb40ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.75 EUR
6000+0.71 EUR
9000+0.68 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJB40EP-T1_BE3 Vishay Siliconix

Description: MOSFET 2N-CH 40V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJB40EP-T1_BE3 nach Preis ab 0.74 EUR bis 1.87 EUR

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SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Hersteller : Vishay Siliconix sqjb40ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
12+1.48 EUR
100+1.15 EUR
500+0.98 EUR
1000+0.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Hersteller : Vishay / Siliconix sqjb40ep.pdf MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
auf Bestellung 17124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.87 EUR
10+1.53 EUR
100+1.19 EUR
500+1.01 EUR
1000+0.82 EUR
3000+0.77 EUR
6000+0.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH