SQJB40EP-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.75 EUR |
| 6000+ | 0.71 EUR |
| 9000+ | 0.68 EUR |
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Technische Details SQJB40EP-T1_BE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 34W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJB40EP-T1_BE3 nach Preis ab 0.74 EUR bis 1.87 EUR
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SQJB40EP-T1_BE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 30A PPAK SO8 Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 34W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJB40EP-T1_BE3 | Vishay / Siliconix |
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE |
auf Bestellung 17124 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJB40EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.8 EUR |
| 12+ | 1.48 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.79 EUR |
| SQJB40EP-T1_BE3 |
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Hersteller: Vishay / Siliconix
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
auf Bestellung 17124 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.87 EUR |
| 10+ | 1.53 EUR |
| 100+ | 1.19 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.82 EUR |
| 3000+ | 0.77 EUR |
| 6000+ | 0.74 EUR |