SQJB48EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.30 EUR |
| 1000+ | 1.06 EUR |
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Technische Details SQJB48EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQJB48EP-T1_GE3 nach Preis ab 0.99 EUR bis 2.48 EUR
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SQJB48EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET DUAL N-CHANNEL 40-V (D-S) MOSFET |
auf Bestellung 2285 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJB48EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 30A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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