Produkte > VISHAY SILICONIX > SQJB80EP-T1_GE3
SQJB80EP-T1_GE3

SQJB80EP-T1_GE3 Vishay Siliconix

sqjb80ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
11+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJB80EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 80V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJB80EP-T1_GE3 nach Preis ab 0.83 EUR bis 2.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJB80EP-T1_GE3 SQJB80EP-T1_GE3 Hersteller : Vishay / Siliconix sqjb80ep.pdf MOSFET 80V Vds 30A Id AEC-Q101 Qualified
auf Bestellung 13928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.06 EUR
10+ 1.69 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
3000+ 0.85 EUR
6000+ 0.83 EUR
Mindestbestellmenge: 2
SQJB80EP-T1_GE3 SQJB80EP-T1_GE3 Hersteller : Vishay Siliconix sqjb80ep.pdf Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar