SQJQ112ER-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 3.01 EUR |
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Technische Details SQJQ112ER-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 296A (Tc), Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJQ112ER-T1_GE3 nach Preis ab 3.2 EUR bis 6.18 EUR
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SQJQ112ER-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET |
auf Bestellung 2215 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ112ER-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJQ112ER-T1_GE3 | Hersteller : Vishay |
100 V N-Channel MOSFET |
Produkt ist nicht verfügbar |