SQJQ112ER-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.91 EUR |
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Technische Details SQJQ112ER-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 296A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJQ112ER-T1_GE3 nach Preis ab 2.93 EUR bis 8.06 EUR
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SQJQ112ER-T1_GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET |
auf Bestellung 4683 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ112ER-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 296A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 2531 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJQ112ER-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
auf Bestellung 4683 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.78 EUR |
| 10+ | 5.16 EUR |
| 100+ | 3.68 EUR |
| 500+ | 3.22 EUR |
| 2000+ | 3.06 EUR |
| SQJQ112ER-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 2531 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.06 EUR |
| 10+ | 5.34 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.14 EUR |
| 1000+ | 2.93 EUR |