SQJQ131EL-T1_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 5.24 EUR |
| 10+ | 4.4 EUR |
| 25+ | 4.28 EUR |
| 100+ | 3.57 EUR |
| 250+ | 3.45 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.71 EUR |
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Technische Details SQJQ131EL-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 280A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJQ131EL-T1_GE3 nach Preis ab 2.58 EUR bis 7.25 EUR
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SQJQ131EL-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
auf Bestellung 1229 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJQ131EL-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.78 EUR |
| 100+ | 3.37 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.58 EUR |