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SQJQ144AER-T1_GE3

SQJQ144AER-T1_GE3 Vishay Semiconductors


sqjq144aer.pdf Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET
auf Bestellung 3464 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.42 EUR
10+ 3.71 EUR
25+ 3.61 EUR
100+ 3.01 EUR
250+ 2.92 EUR
500+ 2.68 EUR
1000+ 2.29 EUR
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Technische Details SQJQ144AER-T1_GE3 Vishay Semiconductors

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 575A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V.

Weitere Produktangebote SQJQ144AER-T1_GE3 nach Preis ab 4.43 EUR bis 4.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJQ144AER-T1_GE3 SQJQ144AER-T1_GE3 Hersteller : Vishay Siliconix sqjq144aer.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.93 EUR
10+ 4.43 EUR
Mindestbestellmenge: 4
SQJQ144AER-T1_GE3 SQJQ144AER-T1_GE3 Hersteller : Vishay Siliconix sqjq144aer.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
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