SQJQ402E-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.74 EUR |
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Technische Details SQJQ402E-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJQ402E-T1_GE3 nach Preis ab 1.81 EUR bis 5.39 EUR
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SQJQ402E-T1_GE3 | Vishay / Siliconix |
MOSFETs N-Channel 40V AEC-Q101 Qualified |
auf Bestellung 38043 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ402E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) |
auf Bestellung 38754 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJQ402E-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs N-Channel 40V AEC-Q101 Qualified
MOSFETs N-Channel 40V AEC-Q101 Qualified
auf Bestellung 38043 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 3.5 EUR |
| 100+ | 2.45 EUR |
| 500+ | 2.13 EUR |
| 1000+ | 2.02 EUR |
| 2000+ | 1.81 EUR |
| SQJQ402E-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
auf Bestellung 38754 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.39 EUR |
| 10+ | 3.51 EUR |
| 100+ | 2.45 EUR |
| 500+ | 2.13 EUR |