SQJQ980EL-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SQJQ980EL-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 80V 36A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 187W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8 Dual, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJQ980EL-T1_GE3 nach Preis ab 1.9 EUR bis 5.49 EUR
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SQJQ980EL-T1_GE3 | Vishay / Siliconix |
MOSFETs 80V Vds Dual N-Ch AEC-Q101 Qualified |
auf Bestellung 2047 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ980EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 80V 36A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3889 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJQ980EL-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 80V Vds Dual N-Ch AEC-Q101 Qualified
MOSFETs 80V Vds Dual N-Ch AEC-Q101 Qualified
auf Bestellung 2047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.42 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 2.04 EUR |
| 2000+ | 1.9 EUR |
| SQJQ980EL-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.58 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 2 EUR |