SQM100N04-2m7_GE3 Vishay / Siliconix
auf Bestellung 639 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.03 EUR |
| 250+ | 2.80 EUR |
| 500+ | 2.53 EUR |
| 800+ | 2.01 EUR |
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Technische Details SQM100N04-2m7_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM100N04-2m7_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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SQM100N04-2M7_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SQM100N04-2m7_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 98A Power dissipation: 157W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 95.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM100N04-2m7_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM100N04-2m7_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SQM100N04-2M7-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO-263 |
Produkt ist nicht verfügbar |
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SQM100N04-2M7-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 |
Produkt ist nicht verfügbar |
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SQM100N04-2m7_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 98A Power dissipation: 157W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 95.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |