SQM120N06-3m5L_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.22 EUR |
| 10+ | 5.58 EUR |
| 100+ | 3.99 EUR |
Produktrezensionen
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Technische Details SQM120N06-3m5L_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQM120N06-3m5L_GE3 nach Preis ab 3.34 EUR bis 8.22 EUR
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SQM120N06-3m5L_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60 V 120A 375 W AEC-Q101 Qualified |
auf Bestellung 3203 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM120N06-3M5L_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM120N06-3M5L_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 0.0028 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: Lead (07-Nov-2024) |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120N06-3M5L_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM120N06-3M5L_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 0.0028 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: Lead (07-Nov-2024) |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120N06-3M5L_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120N06-3M5L-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SQM120N06-3m5L_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM120N06-3m5L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM120N06-3M5L-GE3 | Hersteller : Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQM1 |
Produkt ist nicht verfügbar |
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SQM120N06-3m5L_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |