SQM50034E_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.61 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.03 EUR |
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Technische Details SQM50034E_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM50034E_GE3 nach Preis ab 2.09 EUR bis 6.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SQM50034E_GE3 | Vishay / Siliconix |
MOSFETs Nch 60V Vds 20V Vgs TO-263 |
auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQM50034E_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 100A; 150W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 100A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhancement Semiconductor structure: single transistor Application: automotive industry |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQM50034E_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs Nch 60V Vds 20V Vgs TO-263
MOSFETs Nch 60V Vds 20V Vgs TO-263
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.37 EUR |
| 10+ | 4.13 EUR |
| 100+ | 2.84 EUR |
| 500+ | 2.39 EUR |
| 800+ | 2.26 EUR |
| 2400+ | 2.12 EUR |
| 4800+ | 2.09 EUR |
| SQM50034E_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.21 EUR |
| 1600+ | 3.08 EUR |