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SQM50P03-07_GE3

SQM50P03-07_GE3 Vishay / Siliconix


sqm50p03.pdf Hersteller: Vishay / Siliconix
MOSFETs P-Channel 30V AEC-Q101 Qualified
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Lieferzeit 10-14 Tag (e)
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1+4.52 EUR
10+3.31 EUR
100+2.52 EUR
250+2.20 EUR
500+2.09 EUR
800+1.87 EUR
2400+1.85 EUR
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Technische Details SQM50P03-07_GE3 Vishay / Siliconix

Description: MOSFET P-CHANNEL 30V 50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQM50P03-07_GE3 nach Preis ab 2.52 EUR bis 5.56 EUR

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SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay Siliconix sqm50p03.pdf Description: MOSFET P-CHANNEL 30V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+3.63 EUR
100+2.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SQM50P03-07-GE3 SQM50P03-07-GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay Siliconix sqm50p03.pdf Description: MOSFET P-CHANNEL 30V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQM50P03-07-GE3 SQM50P03-07-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT 78-SQM50P03-07_GE3
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