SQM50P03-07_GE3 Vishay / Siliconix
auf Bestellung 7117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.73 EUR |
| 10+ | 3.38 EUR |
| 25+ | 3.36 EUR |
| 100+ | 2.39 EUR |
| 500+ | 2.31 EUR |
| 800+ | 1.94 EUR |
| 2400+ | 1.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQM50P03-07_GE3 Vishay / Siliconix
Description: MOSFET P-CHANNEL 30V 50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM50P03-07_GE3 nach Preis ab 2.52 EUR bis 5.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQM50P03-07_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CHANNEL 30V 50A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
SQM50P03-07-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
SQM50P03-07_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||
 |
SQM50P03-07_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 50A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
SQM50P03-07_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 30V 50A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||
|
|
SQM50P03-07-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQM50P03-07_GE3 |
Produkt ist nicht verfügbar |