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SQM60N20-35_GE3

SQM60N20-35_GE3 Vishay Siliconix

sqm60n20-35.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.43 EUR
1600+ 2.94 EUR
Mindestbestellmenge: 800
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Technische Details SQM60N20-35_GE3 Vishay Siliconix

Description: MOSFET N-CH 200V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQM60N20-35_GE3 nach Preis ab 2.8 EUR bis 5.74 EUR

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Preis ohne MwSt
SQM60N20-35_GE3 SQM60N20-35_GE3 Hersteller : Vishay Siliconix sqm60n20-35.pdf Description: MOSFET N-CH 200V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.68 EUR
10+ 4.77 EUR
100+ 3.86 EUR
Mindestbestellmenge: 4
SQM60N20-35_GE3 SQM60N20-35_GE3 Hersteller : Vishay / Siliconix sqm60n20-35.pdf MOSFET N-Channel 200V AEC-Q101 Qualified
auf Bestellung 1740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.74 EUR
10+ 4.8 EUR
25+ 4.56 EUR
100+ 3.89 EUR
250+ 3.68 EUR
500+ 3.47 EUR
800+ 2.8 EUR
SQM60N20-35_GE3 SQM60N20-35_GE3 Hersteller : Vishay sqm60n20-35.pdf Trans MOSFET N-CH 200V 60A Automotive
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SQM60N20-35-GE3 SQM60N20-35-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQM60N20-35_GE3
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