SQS124ELNW-T1_GE3 Vishay / Siliconix
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.65 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.56 EUR |
| 6000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQS124ELNW-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 100A TO252AA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 107A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS124ELNW-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SQS124ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 100A TO252AAPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |