
SQS140ELNW-T1_GE3 Vishay / Siliconix

MOSFETs Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK 1212-8SLW, 2.53 mohm a. 10V, 3.45 mohm a. 4.5V
auf Bestellung 3778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.76 EUR |
10+ | 1.46 EUR |
100+ | 1.13 EUR |
500+ | 0.96 EUR |
1000+ | 0.78 EUR |
3000+ | 0.74 EUR |
6000+ | 0.70 EUR |
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Technische Details SQS140ELNW-T1_GE3 Vishay / Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 153A (Tc), Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS140ELNW-T1_GE3 nach Preis ab 0.79 EUR bis 2.01 EUR
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SQS140ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 153A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2848 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS140ELNW-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQS140ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 153A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |