auf Bestellung 24226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.67 EUR |
| 3000+ | 0.56 EUR |
| 6000+ | 0.55 EUR |
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Technische Details SQS142ELNW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS142ELNW-T1_GE3 nach Preis ab 0.65 EUR bis 1.99 EUR
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SQS142ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS142ELNW-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQS142ELNW-T1_GE3 - AUTOMOTIVE N-CH 40 V (D-S) MOSFET MSL: MSL 1 - unbegrenzt SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 6550 Stücke: Lieferzeit 14-21 Tag (e) |
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SQS142ELNW-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQS142ELNW-T1_GE3 - AUTOMOTIVE N-CH 40 V (D-S) MOSFET |
auf Bestellung 6550 Stücke: Lieferzeit 14-21 Tag (e) |
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SQS142ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |