| Anzahl | Preis |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.67 EUR |
| 3000+ | 0.56 EUR |
| 6000+ | 0.55 EUR |
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Technische Details SQS142ELNW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SLW, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® 1212-8SLW, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQS142ELNW-T1_GE3 nach Preis ab 0.65 EUR bis 1.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SQS142ELNW-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8SLW Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SLW Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel |
auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQS142ELNW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
auf Bestellung 1872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 16+ | 1.15 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.65 EUR |