SQS142ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
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Technische Details SQS142ENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQS142ENW-T1_GE3 nach Preis ab 0.53 EUR bis 1.5 EUR
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SQS142ENW-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs |
auf Bestellung 37239 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS142ENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQS142ENW-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 110A Automotive AEC-Q101 T/R |
Produkt ist nicht verfügbar |
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| SQS142ENW-T1/GE3 | Hersteller : Vishay | MOSFETs |
Produkt ist nicht verfügbar |