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SQS166ELNW-T1_GE3

SQS166ELNW-T1_GE3 Vishay Siliconix

sqs166elnw.pdf Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
24+0.76 EUR
26+0.68 EUR
100+0.6 EUR
250+0.56 EUR
500+0.53 EUR
1000+0.51 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQS166ELNW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 60V (D-S), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V, Power Dissipation (Max): 91W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V.

Weitere Produktangebote SQS166ELNW-T1_GE3 nach Preis ab 0.45 EUR bis 1.49 EUR

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SQS166ELNW-T1_GE3 SQS166ELNW-T1_GE3 Hersteller : Vishay / Siliconix sqs166elnw.pdf MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 3956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+1.11 EUR
100+0.76 EUR
500+0.63 EUR
1000+0.58 EUR
3000+0.49 EUR
6000+0.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQS166ELNW-T1_GE3 SQS166ELNW-T1_GE3 Hersteller : Vishay Siliconix sqs166elnw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH