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SQS180ENW-T1_GE3

SQS180ENW-T1_GE3 Vishay Siliconix

sqs180enw.pdf Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.62 EUR
14+ 1.33 EUR
100+ 1.03 EUR
500+ 0.88 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 11
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Technische Details SQS180ENW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQS180ENW-T1_GE3 nach Preis ab 0.65 EUR bis 1.65 EUR

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SQS180ENW-T1_GE3 SQS180ENW-T1_GE3 Hersteller : Vishay / Siliconix sqs180enw.pdf MOSFET Automotive N-Channel 80 V (D-S) 175C MOSFET PowerPAK 1212-8SW, 8.67 mohm a. 10V
auf Bestellung 5185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.65 EUR
10+ 1.35 EUR
100+ 1.05 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
3000+ 0.65 EUR
Mindestbestellmenge: 2
SQS180ENW-T1_GE3 SQS180ENW-T1_GE3 Hersteller : Vishay Siliconix sqs180enw.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V
Qualification: AEC-Q101
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