SQS407ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.66 EUR |
| 6000+ | 0.65 EUR |
| 9000+ | 0.63 EUR |
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Technische Details SQS407ENW-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQS407ENW-T1_GE3 nach Preis ab 0.65 EUR bis 2.53 EUR
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SQS407ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8W Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 27453 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS407ENW-T1_GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8W |
auf Bestellung 70336 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQS407ENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 13+ | 1.44 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.76 EUR |
| SQS407ENW-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8W
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8W
auf Bestellung 70336 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.61 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
| 3000+ | 0.67 EUR |
| 6000+ | 0.65 EUR |