Produkte > VISHAY SILICONIX > SQS420EN-T1_GE3
SQS420EN-T1_GE3

SQS420EN-T1_GE3 Vishay Siliconix


sqs420en.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.62 EUR
9000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SQS420EN-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 8A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SQS420EN-T1_GE3 nach Preis ab 0.63 EUR bis 2.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SQS420EN-T1_GE3 SQS420EN-T1_GE3 Hersteller : Vishay Semiconductors sqs420en.pdf MOSFETs 20V 8A 18W AEC-Q101 Qualified
auf Bestellung 22356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.04 EUR
10+1.37 EUR
100+1.04 EUR
250+1.03 EUR
500+0.85 EUR
1000+0.73 EUR
3000+0.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQS420EN-T1_GE3 SQS420EN-T1_GE3 Hersteller : Vishay Siliconix sqs420en.pdf Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
13+1.4 EUR
100+1.06 EUR
500+0.85 EUR
1000+0.76 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SQS420EN-T1-GE3 Hersteller : Vishay sqs420en.pdf Trans MOSFET N-CH 20V 8A Automotive 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQS420EN-T1_GE3 SQS420EN-T1_GE3 Hersteller : Vishay sqs420en.pdf Trans MOSFET N-CH 20V 8A Automotive 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH