SQS420EN-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.73 EUR |
| 9000+ | 0.7 EUR |
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Technische Details SQS420EN-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS420EN-T1_GE3 nach Preis ab 0.73 EUR bis 2.95 EUR
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SQS420EN-T1_GE3 | Vishay Semiconductors |
MOSFETs 20V 8A 18W AEC-Q101 Qualified |
auf Bestellung 22089 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS420EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 8A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9570 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQS420EN-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V 8A 18W AEC-Q101 Qualified
MOSFETs 20V 8A 18W AEC-Q101 Qualified
auf Bestellung 22089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.95 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |
| 3000+ | 0.77 EUR |
| 6000+ | 0.73 EUR |
| SQS420EN-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.95 EUR |
| 12+ | 1.87 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |