SQS460CENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.49 EUR |
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Technische Details SQS460CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 27W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQS460CENW-T1_GE3 nach Preis ab 0.45 EUR bis 1.99 EUR
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SQS460CENW-T1_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
auf Bestellung 2176 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS460CENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8W Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 5725 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQS460CENW-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 2176 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| SQS460CENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 5725 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 15+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |