SQS460ENW-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 8A PPAK1212-8W, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel.