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SQS484EN-T1_GE3

SQS484EN-T1_GE3 Vishay Siliconix

sqs484en.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.75 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQS484EN-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V.

Weitere Produktangebote SQS484EN-T1_GE3 nach Preis ab 0.64 EUR bis 1.78 EUR

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SQS484EN-T1_GE3 SQS484EN-T1_GE3 Hersteller : Vishay / Siliconix sqs484en.pdf MOSFETs 40V 16A 62W AEC-Q101 Qualified
auf Bestellung 4859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.02 EUR
100+0.83 EUR
500+0.72 EUR
1000+0.69 EUR
3000+0.66 EUR
6000+0.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQS484EN-T1_GE3 SQS484EN-T1_GE3 Hersteller : Vishay Siliconix sqs484en.pdf Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
auf Bestellung 14249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
12+1.58 EUR
100+1.23 EUR
500+1.02 EUR
1000+0.80 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SQS484EN-T1_GE3 SQS484EN-T1_GE3 Hersteller : Vishay sqs484en.pdf Trans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 T/R
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