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SQS840EN-T1_GE3

SQS840EN-T1_GE3 Vishay Siliconix

sqs840en.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
16+1.14 EUR
100+0.79 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 12
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Technische Details SQS840EN-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 12A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

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SQS840EN-T1_GE3 SQS840EN-T1_GE3 Hersteller : Vishay / Siliconix sqs840en.pdf MOSFETs 40V 12A 33W AEC-Q101 Qualified
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.56 EUR
10+1.21 EUR
100+0.84 EUR
500+0.7 EUR
1000+0.64 EUR
3000+0.55 EUR
6000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQS840EN-T1_GE3 SQS840EN-T1_GE3 Hersteller : Vishay Siliconix sqs840en.pdf Description: MOSFET N-CH 40V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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