SQS850EN-T1_GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SQS850EN-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.018 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: To Be Advised
| Anzahl | Privatkunde |
|---|---|
| 165+ | 1.52 EUR |
| 182+ | 1.29 EUR |
| 202+ | 1.06 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.86 EUR |
Produktrezensionen
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Technische Details SQS850EN-T1_GE3 VISHAY
Description: MOSFET N-CH 60V 12A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2021 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQS850EN-T1_GE3 nach Preis ab 0.84 EUR bis 3.2 EUR
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SQS850EN-T1_GE3 | VISHAY |
Description: VISHAY - SQS850EN-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.018 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: To Be Advised |
auf Bestellung 1109 Stücke: Lieferzeit 14-21 Tag (e) |
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SQS850EN-T1_GE3 | Vishay Semiconductors |
MOSFETs N-Channel 60V AEC-Q101 Qualified |
auf Bestellung 10363 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS850EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 12A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2021 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3912 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQS850EN-T1_GE3 |
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Hersteller: VISHAY
Description: VISHAY - SQS850EN-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.018 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: To Be Advised
Description: VISHAY - SQS850EN-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.018 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: To Be Advised
auf Bestellung 1109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 165+ | 1.52 EUR |
| 182+ | 1.29 EUR |
| 202+ | 1.06 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.86 EUR |
| SQS850EN-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Channel 60V AEC-Q101 Qualified
MOSFETs N-Channel 60V AEC-Q101 Qualified
auf Bestellung 10363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 2 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.84 EUR |
| SQS850EN-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2021 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2021 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3912 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 11+ | 2.03 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |