SQS944ENW-T1_GE3 Vishay / Siliconix
auf Bestellung 14959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.62 EUR |
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Technische Details SQS944ENW-T1_GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 40V 6A PWRPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W Dual, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W Dual, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQS944ENW-T1_GE3 nach Preis ab 0.67 EUR bis 1.8 EUR
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SQS944ENW-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 40V 6A PWRPAK1212Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Dual Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1729 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS944ENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PWRPAK1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8W Dual Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Dual Grade: Automotive Qualification: AEC-Q101 |
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