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SQSA12CENW-T1_GE3

SQSA12CENW-T1_GE3 Vishay Siliconix

sqsa12cenw.pdf Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
6000+0.51 EUR
9000+0.5 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQSA12CENW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQSA12CENW-T1_GE3 nach Preis ab 0.52 EUR bis 1.72 EUR

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SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay Siliconix sqsa12cenw.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
14+1.31 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.63 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay / Siliconix sqsa12cenw.pdf MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
auf Bestellung 20678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.72 EUR
10+1.16 EUR
100+0.8 EUR
500+0.7 EUR
1000+0.62 EUR
3000+0.55 EUR
6000+0.52 EUR
Mindestbestellmenge: 2
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SQSA12CENW-T1_GE3 Hersteller : Vishay sqsa12cenw.pdf N-CHANNEL 100-V (D-S) 175C MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH