SQSA80ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 18A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details SQSA80ENW-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 18A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SQSA80ENW-T1_GE3 nach Preis ab 0.69 EUR bis 2.5 EUR
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SQSA80ENW-T1_GE3 | Vishay Semiconductors |
MOSFET 80V Vds PowerPAK AEC-Q101 Qualified |
auf Bestellung 7366 Stücke: Lieferzeit 10-14 Tag (e) |
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SQSA80ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 18A PPAK1212-8 Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 7922 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQSA80ENW-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFET 80V Vds PowerPAK AEC-Q101 Qualified
MOSFET 80V Vds PowerPAK AEC-Q101 Qualified
auf Bestellung 7366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.43 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.72 EUR |
| 6000+ | 0.69 EUR |
| SQSA80ENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 18A PPAK1212-8
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 18A PPAK1212-8
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.5 EUR |
| 12+ | 1.58 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |