SQSA82CENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.52 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQSA82CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQSA82CENW-T1_GE3 nach Preis ab 0.48 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQSA82CENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14607 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SQSA82CENW-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET Automotive N-Channel 80V (D-S) 175C MOSFET W 37mohms SG |
auf Bestellung 30187 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| SQSA82CENW-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 12A Automotive T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SQSA82CENW-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 35A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 97.1mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SQSA82CENW-T1/GE3 | Hersteller : Vishay | Vishay |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SQSA82CENW-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 35A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 97.1mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |