SQSA82CENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
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Technische Details SQSA82CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 27W (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQSA82CENW-T1_GE3 nach Preis ab 0.34 EUR bis 1.51 EUR
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SQSA82CENW-T1_GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET |
auf Bestellung 23356 Stücke: Lieferzeit 10-14 Tag (e) |
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SQSA82CENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8W Packaging: Cut Tape (CT) |
auf Bestellung 9756 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQSA82CENW-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
auf Bestellung 23356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| SQSA82CENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
auf Bestellung 9756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |