SQW61N65EF-GE3 Vishay Siliconix

Description: MOSFET N-CH 650V 62A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Grade: Automotive, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V, Qualification: AEC-Q101.