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SRAS830HMNG

SRAS830HMNG Taiwan Semiconductor Corporation

SRAS820%20SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 8A TO263AB
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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Technische Details SRAS830HMNG Taiwan Semiconductor Corporation

Description: DIODE SCHOTTKY 30V 8A TO263AB, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 30 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 8A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 100 µA @ 30 V.